1MotorolaTMOSPowerMOSFETTransistorDeviceData
C0068C0101C0115C0105C0103C0110C0101C0114C0039C0115?C0068C0097C0116C0097C0083C0104C0101C0101C0116
C0072C0068C0084C0077C0079C0083C0069C0045C0070C0069C0084C0046?
C0072C0105C0103C0104C0068C0101C0110C0115C0105C0116C0121C0080C0111C0119C0101C0114C0070C0069C0084
C0068C0080C0065C0075C0102C0111C0114C0083C0117C0114C0102C0097C0099C0101C0077C0111C0117C0110C0116
N–ChannelEnhancement–ModeSiliconGate
ThisadvancedHDTMOSpowerFETisdesignedtowithstand
highenergyintheavalancheandcommutationmodes.Thisnew
energyefficientdesignalsooffersadrain–to–sourcediodewitha
fastrecoverytime.Designedforlowvoltage,highspeedswitching
applicationsinpowersupplies,convertersandPWMmotor
controls,thesedevicesareparticularlywellsuitedforbridgecircuits
wherediodespeedandcommutatingsafeoperatingareasare
criticalandofferadditionalsafetymarginagainstunexpected
voltagetransients.
?AvalancheEnergySpecified
?Source–to–DrainDiodeRecoveryTimeComparabletoaDis-
creteFastRecoveryDiode
?DiodeisCharacterizedforUseinBridgeCircuits
?I
DSS
andV
DS(on)
SpecifiedatElevatedTemperature
?SurfaceMountPackageAvailablein16mm,13–inch/2500
UnitTape&Reel,AddT4SuffixtoPartNumber
MAXIMUMRATINGS(T
C
=25°Cunlessotherwisenoted)
RatingSymbolValueUnit
Drain–SourceVoltageV
DSS
30Vdc
Drain–GateVoltage(R
GS
=1.0M?)V
DGR
30Vdc
Gate–SourceVoltage—Continuous
Gate–SourceVoltage—Non–Repetitive(t
p
≤10ms)
V
GS
V
GSM
±15
±20
Vdc
Vpk
DrainCurrent—Continuous
DrainCurrent—Continuous@100°C
DrainCurrent—SinglePulse(t
p
≤10μs)
I
D
I
D
I
DM
20
16
60
Adc
Apk
TotalPowerDissipation
Derateabove25°C
TotalPowerDissipation@T
C
=25°C,whenmountedwiththeminimumrecommendedpadsize
P
D
74
0.6
1.75
Watts
W/°C
OperatingandStorageTemperatureRangeT
J
,T
stg
–55to150°C
SinglePulseDrain–to–SourceAvalancheEnergy—StartingT
J
=25°C
(V
DD
=25Vdc,V
GS
=5.0Vdc,PeakI
L
=20Apk,L=1.0mH,R
G
=25?)
E
AS
200mJ
ThermalResistance—JunctiontoCase
ThermalResistance—JunctiontoAmbient
ThermalResistance—JunctiontoAmbient,whenmountedwiththeminimumrecommendedpadsize
R
θJC
R
θJA
R
θJA
1.67
100
71.4
°C/W
MaximumLeadTemperatureforSolderingPurposes,1/8″fromcasefor10secondsT
L
260°C
Designer’sDatafor“WorstCase”Conditions—TheDesigner’sDataSheetpermitsthedesignofmostcircuitsentirelyfromtheinformationpresented.SOALimit
curves—representingboundariesondevicecharacteristics—aregiventofacilitate“worstcase”design.
Designer’s,E–FET,andHDTMOSaretrademarksofMotorola,Inc.TMOSisaregisteredtrademarkofMotorola,Inc.
ThermalCladisatrademarkoftheBergquistCompany.
PreferreddevicesareMotorolarecommendedchoicesforfutureuseandbestoverallvalue.
REV1
Orderthisdocument
byMTD20N03HDL/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTORTECHNICALDATA
?Motorola,Inc.1995
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
TMOSPOWERFET
LOGICLEVEL
20AMPERES
30VOLTS
R
DS(on)
=0.035OHM
MotorolaPreferredDevice
?
D
S
G
CASE369A–13,Style2
DPAK
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
2MotorolaTMOSPowerMOSFETTransistorDeviceData
ELECTRICALCHARACTERISTICS(T
J
=25°Cunlessotherwisenoted)
CharacteristicSymbolMinTypMaxUnit
OFFCHARACTERISTICS
Drain–to–SourceBreakdownVoltage(C
pk
≥2.0)(3)
(V
GS
=0Vdc,I
D
=250μAdc)
TemperatureCoefficient(Positive)
V
(BR)DSS
30
—
—
43
—
—
Vdc
mV/°C
ZeroGateVoltageDrainCurrent
(V
DS
=30Vdc,V
GS
=0Vdc)
(V
DS
=30Vdc,V
GS
=0Vdc,T
J
=125°C)
I
DSS
—
—
—
—
10
100
μAdc
Gate–BodyLeakageCurrent
(V
GS
=±15Vdc,V
DS
=0Vdc)
I
GSS
——100
nAdc
ONCHARACTERISTICS(1)
GateThresholdVoltage(C
pk
≥2.0)(3)
(V
DS
=V
GS
,I
D
=250μAdc)
ThresholdTemperatureCoefficient(Negative)
V
GS(th)
1.0
—
1.5
5.0
2.0
—
Vdc
mV/°C
StaticDrain–to–SourceOn–Resistance(C
pk
≥2.0)(3)
(V
GS
=4.0Vdc,I
D
=10Adc)
(V
GS
=5.0Vdc,I
D
=10Adc)
R
DS(on)
—0.034
0.030
0.040
0.035
Ohm
Drain–to–SourceOn–Voltage(V
GS
=5.0Vdc)
(I
D
=20Adc)
(I
D
=10Adc,T
J
=125°C)
V
DS(on)
—
—
0.55
—
0.8
0.7
Vdc
ForwardTransconductance
(V
DS
=5.0Vdc,I
D
=10Adc)
g
FS
1013—
mhos
DYNAMICCHARACTERISTICS
InputCapacitance
(V
DS
=25Vdc,V
GS
=0Vdc,
f=1.0MHz)
C
iss
—8801260pF
OutputCapacitance
C
oss
—300420
TransferCapacitance
C
rss
—80112
SWITCHINGCHARACTERISTICS(2)
Turn–OnDelayTime
(V
DD
=15Vdc,I
D
=20Adc,
V
GS
=5.0Vdc,
R
G
=9.1?)
t
d(on)
—1315.8ns
RiseTimet
r
—212238
Turn–OffDelayTimet
d(off)
—3730
FallTimet
f
—8496
GateCharge
(SeeFigure8)
(V
DS
=24Vdc,I
D
=20Adc,
V
GS
=5.0Vdc)
Q
T
—13.418.9nC
Q
1
—3.0—
Q
2
—7.3—
Q
3
—6.0—
SOURCE–DRAINDIODECHARACTERISTICS
ForwardOn–Voltage
(C
pk
≥2.0)(3)
(I
S
=20Adc,V
GS
=0Vdc)
(I
S
=20Adc,V
GS
=0Vdc,T
J
=125°C)
V
SD
—
—
0.95
0.87
1.1
—
Vdc
ReverseRecoveryTime
(SeeFigure15)
(I
S
=20Adc,V
GS
=0Vdc,
dI
S
/dt=100A/μs)
t
rr
—33—ns
t
a
—23—
t
b
—10—
ReverseRecoveryStoredChargeQ
RR
—33—μC
INTERNALPACKAGEINDUCTANCE
InternalDrainInductance
(Measuredfromthedrainlead0.25″frompackagetocenterofdie)
L
D
—4.5—
nH
InternalSourceInductance
(Measuredfromthesourcelead0.25″frompackagetosourcebondpad)
L
S
—7.5—
nH
(1)PulseTest:PulseWidth≤n636861720000000000000000300μs,DutyCycle≤2%.
(2)Switchingcharacteristicsareindependentofoperatingjunctiontemperature.
(3)Reflectstypicalvalues.C
pk
=AbsoluteValueofSpec(Spec–AVG/3.516μA).
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
3MotorolaTMOSPowerMOSFETTransistorDeviceData
TYPICALELECTRICALCHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCERESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCERESIST
ANCE(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCERESIST
ANCE(OHMS)
I
DSS
,LEAKAGE(nA)
V
DS
,DRAIN–TO–SOURCEVOLTAGE(Volts)T
J
,JUNCTIONTEMPERATURE(°C)
I
D
,DRAINCURRENT(Amps)I
D
,DRAINCURRENT(Amps)
V
DS
,DRAIN–TO–SOURCEVOLTAGE(Volts)V
GS
,GATE–TO–SOURCEVOLTAGE(Volts)
I
D
,DRAINCURRENT
(AMPS)
I
D
,DRAINCURRENT
(AMPS)
00.40.81.21.62.00.20.61.01.41.8
0
10
20
40
Figure1.On–RegionCharacteristics
0
10
20
30
40
Figure2.TransferCharacteristics
0163240
0.020
0.028
0.036
0.044
0.052
0.020
0.028
0.036
Figure3.On–ResistanceversusDrainCurrent
andTemperature
Figure4.On–ResistanceversusDrainCurrent
andGateVoltage
0.6
0.8
1.0
1.2
1.8
1
1000
Figure5.On–ResistanceVariationwith
Temperature
Figure6.Drain–To–SourceLeakage
CurrentversusVoltage
30
V
GS
=10V
8V
6V
2.5V
3V
T
J
=25°C
4V
1.01.82.63.44.64.25.0
V
DS
≥10V
100°C
25°C
V
GS
=5V
–55°C
25°C
016243240
0.032
0.024
–50–250255075100125150
1.4
0612243018
V
GS
=0V
T
J
=125°C
T
J
=–55°C
T
J
=100°C
T
J
=25°C
V
GS
=5V
10V
V
GS
=5V
I
D
=10A
1.42.23.03.8
100
10
100°C
25°C
3.5V
4.5V
5V
1.6
8248
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
4MotorolaTMOSPowerMOSFETTransistorDeviceData
POWERMOSFETSWITCHING
Switchingbehaviorismosteasilymodeledandpredicted
byrecognizingthatthepowerMOSFETischargecontrolled.
Thelengthsofvariousswitchingintervals(?t)aredeter-
minedbyhowfasttheFETinputcapacitancecanbecharged
bycurrentfromthegenerator.
Thepublishedcapacitancedataisdifficulttouseforcalculat-
ingriseandfallbecausedrain–gatecapacitancevaries
greatlywithappliedvoltage.Accordingly,gatechargedatais
used.Inmostcases,asatisfactoryestimateofaverageinput
current(I
G(AV)
)canbemadefromarudimentaryanalysisof
thedrivecircuitsothat
t=Q/I
G(AV)
Duringtheriseandfalltimeintervalwhenswitchingaresis-
tiveload,V
GS
remainsvirtuallyconstantatalevelknownas
theplateauvoltage,V
SGP
.Therefore,riseandfalltimesmay
beapproximatedbythefollowing:
t
r
=Q
2
xR
G
/(V
GG
–V
GSP
)
t
f
=Q
2
xR
G
/V
GSP
where
V
GG
=thegatedrivevoltage,whichvariesfromzerotoV
GG
R
G
=thegatedriveresistance
andQ
2
andV
GSP
arereadfromthegatechargecurve.
Duringtheturn–onandturn–offdelaytimes,gatecurrentis
notconstant.Thesimplestcalculationusesappropriateval-
uesfromthecapacitancecurvesinastandardequationfor
voltagechangeinanRCnetwork.Theequationsare:
t
d(on)
=R
G
C
iss
In[V
GG
/(V
GG
–V
GSP
)]
t
d(off)
=R
G
C
iss
In(V
GG
/V
GSP
)
Thecapacitance(C
iss
)isreadfromthecapacitancecurveat
avoltagecorrespondingtotheoff–stateconditionwhencal-
culatingt
d(on)
andisreadatavoltagecorrespondingtothe
on–statewhencalculatingt
d(off)
.
Athighswitchingspeeds,parasiticcircuitelementscom-
plicatetheanalysis.TheinductanceoftheMOSFETsource
lead,insidethepackageandinthecircuitwiringwhichis
commontoboththedrainandgatecurrentpaths,producesa
voltageatthesourcewhichreducesthegatedrivecurrent.
ThevoltageisdeterminedbyLdi/dt,butsincedi/dtisafunc-
tionofdraincurrent,themathematicalsolutioniscomplex.
TheMOSFEToutputcapacitancealsocomplicatesthe
mathematics.Andfinally,MOSFETshavefiniteinternalgate
resistancewhicheffectivelyaddstotheresistanceofthe
drivingsource,buttheinternalresistanceisdifficulttomea-
sureand,consequently,isnotspecified.
Theresistiveswitchingtimevariationversusgateresis-
tance(Figure9)showshowtypicalswitchingperformanceis
affectedbytheparasiticcircuitelements.Iftheparasitics
werenotpresent,theslopeofthecurveswouldmaintaina
valueofunityregardlessoftheswitchingspeed.Thecircuit
usedtoobtainthedataisconstructedtominimizecommon
inductanceinthedrainandgatecircuitloopsandisbelieved
readilyachievablewithboardmountedcomponents.Most
powerelectronicloadsareinductive;thedatainthefigureis
takenwitharesistiveload,whichapproximatesanoptimally
snubbedinductiveload.PowerMOSFETsmaybesafelyop-
eratedintoaninductiveload;however,snubbingreduces
switchinglosses.
GATE–TO–SOURCEORDRAIN–TO–SOURCEVOLTAGE(Volts)
C,CAP
ACIT
ANCE(pF)
Figure7.CapacitanceVariation
10010152025
2800
2000
1200
400
0
V
GS
V
DS
1600
800
55
2400
V
DS
=0V
C
iss
C
rss
V
GS
=0V
C
iss
C
oss
C
rss
T
J
=25°C
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
5MotorolaTMOSPowerMOSFETTransistorDeviceData
Q
G
,TOTALGATECHARGE(nC)R
G
,GATERESISTANCE(Ohms)
t,
TIME(ns)
V
DS
,DRAIN–T
O–SOURCEVOL
T
AGE(VOL
TS)
V
GS
,GA
TE–T
O–SOURCEVOL
T
AGE(VOL
TS)
Figure8.Gate–To–SourceandDrain–To–Source
VoltageversusTotalCharge
110100
1000
100
10
V
DD
=15V
I
D
=20A
V
GS
=5.0V
T
J
=25°C
t
r
t
f
t
d(on)
t
d(off)
Figure9.ResistiveSwitchingTime
VariationversusGateResistance
02481214610
10
6
2
0
8
4
1428
20
16
12
4
8
0
QT
Q2
V
GS
I
D
=20A
T
J
=25°C
V
DS
Q3
Q1
2412
DRAIN–TO–SOURCEDIODECHARACTERISTICS
TheswitchingcharacteristicsofaMOSFETbodydiode
areveryimportantinsystemsusingitasafreewheelingor
commutatingdiode.Ofparticularinterestarethereversere-
coverycharacteristicswhichplayamajorroleindetermining
switchinglosses,radiatednoise,EMIandRFI.
Systemswitchinglossesarelargelyduetothenatureof
thebodydiodeitself.Thebodydiodeisaminoritycarrierde-
vice,thereforeithasafinitereverserecoverytime,t
rr
,dueto
thestorageofminoritycarriercharge,Q
RR
,asshowninthe
typicalreverserecoverywaveformofFigure12.Itisthis
storedchargethat,whenclearedfromthediode,passes
throughapotentialanddefinesanenergyloss.Obviously,
repeatedlyforcingthediodethroughreverserecoveryfurther
increasesswitchinglosses.Therefore,onewouldlikea
diodewithshortt
rr
andlowQ
RR
specificationstominimize
theselosses.
Theabruptnessofdiodereverserecoveryeffectsthe
amountofradiatednoise,voltagespikes,andcurrentring-
ing.Themechanismsatworkarefiniteirremovablecircuit
parasiticinductancesandcapacitancesacteduponbyhigh
di/dts.Thediode’snegativedi/dtduringt
a
isdirectlycon-
trolledbythedeviceclearingthestoredcharge.However,
thepositivedi/dtduringt
b
isanuncontrollablediodecharac-
teristicandisusuallytheculpritthatinducescurrentringing.
Therefore,whencomparingdiodes,theratiooft
b
/t
a
serves
asagoodindicatorofrecoveryabruptnessandthusgivesa
comparativeestimateofprobablenoisegenerated.Aratioof
1isconsideredidealandvalueslessthan0.5areconsidered
snappy.
ComparedtoMotorolastandardcelldensitylowvoltage
MOSFETs,highcelldensityMOSFETdiodesarefaster
(shortert
rr
),havelessstoredchargeandasofterreversere-
coverycharacteristic.Thesoftnessadvantageofthehigh
celldensitydiodemeanstheycanbeforcedthroughreverse
recoveryatahigherdi/dtthanastandardcellMOSFET
diodewithoutincreasingthecurrentringingorthenoisegen-
erated.Inaddition,powerdissipationincurredfromswitching
thediodewillbelessduetotheshorterrecoverytimeand
lowerswitchinglosses.
I
S
,SOURCECURRENT
(AMPS)
V
SD
,SOURCE–TO–DRAINVOLTAGE(Volts)
0.500.700.90
0
8
12
16
20
Figure10.DiodeForwardVoltageversusCurrent
4
0.600.80
V
GS
=0V
T
J
=25°C
1.00.650.850.550.750.95
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
6MotorolaTMOSPowerMOSFETTransistorDeviceData
I
S
,SOURCECURRENT
t,TIME
Figure11.ReverseRecoveryTime(t
rr
)
di/dt=300A/μs
StandardCellDensity
HighCellDensity
t
b
t
rr
t
a
t
rr
SAFEOPERATINGAREA
TheForwardBiasedSafeOperatingAreacurvesdefine
themaximumsimultaneousdrain–to–sourcevoltageand
draincurrentthatatransistorcanhandlesafelywhenitisfor-
wardbiased.Curvesarebaseduponmaximumpeakjunc-
tiontemperatureandacasetemperature(T
C
)of25°C.Peak
repetitivepulsedpowerlimitsaredeterminedbyusingthe
thermalresponsedatainconjunctionwiththeprocedures
discussedinAN569,“TransientThermalResistance–Gen-
eralDataandItsUse.”
Switchingbetweentheoff–stateandtheon–statemaytra-
verseanyloadlineprovidedneitherratedpeakcurrent(I
DM
)
norratedvoltage(V
DSS
)isexceeded,andthatthetransition
time(t
r
,t
f
)doesnotexceed10μs.Inadditionthetotalpower
averagedoveracompleteswitchingcyclemustnotexceed
(T
J(MAX)
–T
C
)/(R
θJC
).
ApowerMOSFETdesignatedE–FETcanbesafelyused
inswitchingcircuitswithunclampedinductiveloads.Forreli-
ableoperation,thestoredenergyfromcircuitinductancedis-
sipatedinthetransistorwhileinavalanchemustbelessthan
theratedlimitandmustbeadjustedforoperatingconditions
differingfromthosespecified.Althoughindustrypracticeisto
rateintermsofenergy,avalancheenergycapabilityisnota
constant.Theenergyratingdecreasesnon–linearlywithan
increaseofpeakcurrentinavalancheandpeakjunctiontem-
perature.
AlthoughmanyE–FETscanwithstandthestressofdrain–
to–sourceavalancheatcurrentsuptoratedpulsedcurrent
(I
DM
),theenergyratingisspecifiedatratedcontinuouscur-
rent(I
D
),inaccordancewithindustrycustom.Theenergyrat-
ingmustbederatedfortemperatureasshowninthe
accompanyinggraph(Figure13).Maximumenergyatcur-
rentsbelowratedcontinuousI
D
cansafelybeassumedto
equalthevaluesindicated.
V
DS
,DRAIN–TO–SOURCEVOLTAGE(VOLTS)
I
D
,DRAINCURRENT
(AMPS)
E
AS
,SINGLEPULSEDRAIN–T
O–SOURCE
A
V
ALANCHEENERGY
(mJ)
T
J
,STARTINGJUNCTIONTEMPERATURE(°C)
Figure12.MaximumRatedForwardBiased
SafeOperatingArea
0
255075100125
120
200
40
80
150
160
0.11.0100
100
1
10
Figure13.MaximumAvalancheEnergyversus
StartingJunctionTemperature
10
100μs
1ms
dc
10ms
I
D
=20A
V
GS
=20V
SINGLEPULSE
T
C
=25°C
R
DS(on)
LIMIT
THERMALLIMIT
PACKAGELIMIT
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
7MotorolaTMOSPowerMOSFETTransistorDeviceData
TYPICALELECTRICALCHARACTERISTICS
r(t)
,EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1.0E–05
0.1
1.0
0.01
Figure14.ThermalResponse
0.1
0.2
D=0.5
0.05
0.01
SINGLEPULSE
0.02
t,
TIME
(s)
R
θJC
(t)=r(t)R
θJC
DCURVESAPPLYFORPOWER
PULSETRAINSHOWN
READTIMEATt
1
T
J(pk)
–T
C
=P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTYCYCLE,D=t
1
/t
2
Figure15.DiodeReverseRecoveryWaveform
di/dt
t
rr
t
a
t
p
I
S
0.25I
S
TIME
I
S
t
b
1.0E–041.0E–031.0E–021.0E–011.0E+001.0E+01
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
8MotorolaTMOSPowerMOSFETTransistorDeviceData
INFORMATIONFORUSINGTHEDPAKSURFACEMOUNTPACKAGE
RECOMMENDEDFOOTPRINTFORSURFACEMOUNTEDAPPLICATIONS
Surfacemountboardlayoutisacriticalportionofthetotal
design.Thefootprintforthesemiconductorpackagesmustbe
thecorrectsizetoensurepropersolderconnectioninterface
betweentheboardandthepackage.Withthecorrectpad
geometry,thepackageswillselfalignwhensubjectedtoa
solderreflowprocess.
0.190
4.826
mm
inches
0.100
2.54
0.063
1.6
0.165
4.191
0.118
3.0
0.243
6.172
POWERDISSIPATIONFORASURFACEMOUNTDEVICE
Thepowerdissipationforasurfacemountdeviceisa
functionofthedrainpadsize.Thesecanvaryfromthe
minimumpadsizeforsolderingtoapadsizegivenfor
maximumpowerdissipation.Powerdissipationforasurface
mountdeviceisdeterminedbyT
J(max)
,themaximumrated
junctiontemperatureofthedie,R
θJA
,thethermalresistance
fromthedevicejunctiontoambient,andtheoperating
temperature,T
A
.Usingthevaluesprovidedonthedatasheet,
P
D
canbecalculatedasfollows:
P
D
=
T
J(max)
–T
A
R
θJA
Thevaluesfortheequationarefoundinthemaximum
ratingstableonthedatasheet.Substitutingthesevaluesinto
theequationforanambienttemperatureT
A
of25°C,onecan
calculatethepowerdissipationofthedevice.ForaDPAK
device,P
D
iscalculatedasfollows.
P
D
=
150°C–25°C
71.4°C/W
=1.75Watts
The71.4°C/WfortheDPAKpackageassumestheuseof
therecommendedfootprintonaglassepoxyprintedcircuit
boardtoachieveapowerdissipationof1.75Watts.Thereare
otheralternativestoachievinghigherpowerdissipationfrom
thesurfacemountpackages.Oneistoincreasetheareaofthe
drainpad.Byincreasingtheareaofthedrainpad,thepower
dissipationcanbeincreased.Althoughonecanalmostdouble
thepowerdissipationwiththismethod,onewillbegivingup
areaontheprintedcircuitboardwhichcandefeatthepurpose
ofusingsurfacemounttechnology.Forexample,agraphof
R
θJA
versusdrainpadareaisshowninFigure16.
Figure16.ThermalResistanceversusDrainPad
AreafortheDPAKPackage(Typical)
1.75Watts
BoardMaterial=0.0625″
G–10/FR–4,2ozCopper
80
100
60
40
20
1086420
3.0Watts
5.0Watts
T
A
=25°C
A,AREA(SQUAREINCHES)
T
O
AMBIENT
(
C/W)
°
R
JA
,
THERMAL
RESIST
ANCE,JUNCTION
θ
Anotheralternativewouldbetouseaceramicsubstrateor
analuminumcoreboardsuchasThermalClad?.Usinga
boardmaterialsuchasThermalClad,analuminumcore
board,thepowerdissipationcanbedoubledusingthesame
footprint.
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
9MotorolaTMOSPowerMOSFETTransistorDeviceData
SOLDERSTENCILGUIDELINES
Priortoplacingsurfacemountcomponentsontoaprinted
circuitboard,solderpastemustbeappliedtothepads.Solder
stencilsareusedtoscreentheoptimumamount.These
stencilsaretypically0.008inchesthickandmaybemadeof
brassorstainlesssteel.ForpackagessuchastheSC–59,
SC–70/SOT–323,SOD–123,SOT–23,SOT–143,SOT–223,
SO–8,SO–14,SO–16,andSMB/SMCdiodepackages,the
stencilopeningshouldbethesameasthepadsizeora1:1
registration.ThisisnotthecasewiththeDPAKandD
2
PAK
packages.Ifoneusesa1:1openingtoscreensolderontothe
drainpad,misalignmentand/or“tombstoning”mayoccurdue
toanexcessofsolder.Forthesetwopackages,theopening
inthestencilforthepasteshouldbeapproximately50%ofthe
tabarea.Theopeningfortheleadsisstilla1:1registration.
Figure17showsatypicalstencilfortheDPAKandD
2
PAK
packages.Thepatternoftheopeninginthestencilforthe
drainpadisnotcriticalaslongasitallowsapproximately50%
ofthepadtobecoveredwithpaste.
???
???
???
???
???
???
???
???
???
???
???
???
???
???
??
??
??
??
??
??
??
??
??
??
Figure17.TypicalStencilforDPAKand
D
2
PAKPackages
SOLDERPASTE
OPENINGS
STENCIL
SOLDERINGPRECAUTIONS
Themeltingtemperatureofsolderishigherthantherated
temperatureofthedevice.Whentheentiredeviceisheated
toahightemperature,failuretocompletesolderingwithina
shorttimecouldresultindevicefailure.Therefore,the
followingitemsshouldalwaysbeobservedinorderto
minimizethethermalstresstowhichthedevicesare
subjected.
?Alwayspreheatthedevice.
?Thedeltatemperaturebetweenthepreheatandsoldering
shouldbe100°Corless.
?Whenpreheatingandsoldering,thetemperatureofthe
leadsandthecasemustnotexceedthemaximum
temperatureratingsasshownonthedatasheet.When
usinginfraredheatingwiththereflowsolderingmethod,
thedifferenceshallbeamaximumof10°C.
?Thesolderingtemperatureandtimeshallnotexceed
260°Cformorethan10seconds.
?Whenshiftingfrompreheatingtosoldering,themaximum
temperaturegradientshallbe5°Corless.
?Aftersolderinghasbeencompleted,thedeviceshouldbe
allowedtocoolnaturallyforatleastthreeminutes.
Gradualcoolingshouldbeusedastheuseofforced
coolingwillincreasethetemperaturegradientandresult
inlatentfailureduetomechanicalstress.
?Mechanicalstressorshockshouldnotbeappliedduring
cooling.
Solderingadevicewithoutpreheatingcancauseexcessive
thermalshockandstresswhichcanresultindamagetothe
device.
Duetoshadowingandtheinabilitytosetthewaveheightto
incorporateothersurfacemountcomponents,theD
2
PAKis
notrecommendedforwavesoldering.
C0077C0084C0068C0050C0048C0078C0048C0051C0072C0068C0076
10MotorolaTMOSPowerMOSFETTransistorDeviceData
TYPICALSOLDERHEATINGPROFILE
Foranygivencircuitboard,therewillbeagroupofcontrol
settingsthatwillgivethedesiredheatpattern.Theoperator
mustsettemperaturesforseveralheatingzones,andafigure
forbeltspeed.Takentogether,thesecontrolsettingsmakeup
aheating“profile”forthatparticularcircuitboard.On
machinescontrolledbyacomputer,thecomputerremembers
theseprofilesfromoneoperatingsessiontothenext.Figure
18showsatypicalheatingprofileforusewhensolderinga
surfacemountdevicetoaprintedcircuitboard.Thisprofilewill
varyamongsolderingsystemsbutitisagoodstartingpoint.
Factorsthatcanaffecttheprofileincludethetypeofsoldering
systeminuse,densityandtypesofcomponentsontheboard,
typeofsolderused,andthetypeofboardorsubstratematerial
beingused.Thisprofileshowstemperatureversustime.The
lineonthegraphshowstheactualtemperaturethatmightbe
experiencedonthesurfaceofatestboardatornearacentral
solderjoint.Thetwoprofilesarebasedonahighdensityand
alowdensityboard.TheVitronicsSMD310convection/in-
fraredreflowsolderingsystemwasusedtogeneratethis
profile.Thetypeofsolderusedwas62/36/2TinLeadSilver
withameltingpointbetween177–189°C.Whenthistypeof
furnaceisusedforsolderreflowwork,thecircuitboardsand
solderjointstendtoheatfirst.Thecomponentsontheboard
arethenheatedbyconduction.Thecircuitboard,becauseit
hasalargesurfacearea,absorbsthethermalenergymore
efficiently,thendistributesthisenergytothecomponents.
Becauseofthiseffect,themainbodyofacomponentmaybe
upto30degreescoolerthantheadjacentsolderjoints.
STEP1
PREHEAT
ZONE1
“RAMP”
STEP2
VENT
“SOAK”
STEP3
HEATING
ZONES2&5
“RAMP”
STEP4
HEATING
ZONES3&6
“SOAK”
STEP5
HEATING
ZONES4&7
“SPIKE”
STEP6
VENT
STEP7
COOLING
200°C
150°C
100°C
50°C
TIME(3TO7MINUTESTOTAL)T
MAX
SOLDERISLIQUIDFOR
40TO80SECONDS
(DEPENDINGON
MASSOFASSEMBLY)
205°TO219°C
PEAKAT
SOLDERJOINT
DESIREDCURVEFORLOW
MASSASSEMBLIES
100°C
150°C
160°C
170°C
140°C
Figure18.TypicalSolderHeatingProfile
DESIREDCURVEFORHIGH
MASSASSEMBLIES
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11MotorolaTMOSPowerMOSFETTransistorDeviceData
PACKAGEDIMENSIONS
CASE369A–13
ISSUEW
STYLE2:
PIN1.GATE
2.DRAIN
3.SOURCE
4.DRAIN
D
A
K
B
RV
S
F
L
G
2PL
M
0.13(0.005)T
E
C
U
J
H
–T–
SEATING
PLANE
Z
DIMMINMAXMINMAX
MILLIMETERSINCHES
A0.2350.2505.976.35
B0.2500.2656.356.73
C0.0860.0942.192.38
D0.0270.0350.690.88
E0.0330.0400.841.01
F0.0370.0470.941.19
G0.180BSC4.58BSC
H0.0340.0400.871.01
J0.0180.0230.460.58
K0.1020.1142.602.89
L0.090BSC2.29BSC
R0.1750.2154.455.46
S0.0200.0500.511.27
U0.020–––0.51–––
V0.0300.0500.771.27
Z0.138–––3.51–––
NOTES:
1.DIMENSIONINGANDTOLERANCINGPERANSI
Y14.5M,1982.
2.CONTROLLINGDIMENSION:INCH.
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12MotorolaTMOSPowerMOSFETTransistorDeviceData
Motorolareservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.Motorolamakesnowarranty,representationorguaranteeregarding
thesuitabilityofitsproductsforanyparticularpurpose,nordoesMotorolaassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,
andspecificallydisclaimsanyandallliability,includingwithoutlimitationconsequentialorincidentaldamages.“Typical”parameterscananddovaryindifferent
applications.Alloperatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts.Motoroladoes
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theMotorolaproductcouldcreateasituationwherepersonalinjuryordeathmayoccur.ShouldBuyerpurchaseoruseMotorolaproductsforanysuch
unintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorolaanditsofficers,employees,subsidiaries,affiliates,anddistributorsharmless
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MTD20N03HDL/D
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